【2005年以降（更新準備中）】
【2004年】
Self-organization of a porous alumina nanohole array using a sulfuric/oxalic acid mixture as electrolyte, S. Shingubara, K. Morimoto, H. Sakaue, T. Takahagi, Electrochemical and Solid State Letters Vol.7, No.3 (2004) E15-E17
Wet treatment for preparing atomically smooth Si(100) wafer surface, H. Sakaue, Y. Taniguchi, Y. Okamura, S. Shingubara, T. Takahagi, Appl. Surf. Sci. Vol.234 (2004) 439-444
Effect of Additives on Hole Filling Characteristics of Electroless Copper Plating, Z. Wang, O. Yaegashi, H. Sakaue, T. Takahagi and S. Shingubara, Jpn. J. Appl. Phys. Vol.43, No.10 (2004) 7000-7001
Aspect Ratio Dependence of Magnetic Hysteresis Property of High Density Co Wire Array Buried In Porous Alumina Template, S. Shingubara, K. Morimoto, M. Nagayanagi, T. Shimizu, O. Yaegashi, G.R. Wu, H. Sakaue, T. Takahagi, K. Takase, J. Magnetics and Magnetic Materials Vol.272-276 (2004) 1598-5999
Bottom-Up Fill for Submicrometer Copper Via Hples of ULSIs by Electroless Plating, Z. Wang, O. Yaegashi, H. Sakaue, T. Takahagi and S. Shingubara, J. Electrochem. Sci. Vol.151, No.12 (2004) C781-C785
【2003年】
Highly adhesive electroless Cu layer formation using an ultra thin ionized cluster beam (ICB)-Pd catalytic layer for sub-100 nm Cu interconnections, Wang ZL, Yaegashi O, Sakaue H, Takahagi T, Shingubara S, Jpn. J. Appl. Phys. 42 (10b): L1223-L1225 Oct 15 2003.
Suppression of native oxide growth in sputtered TaN films and its application to Cu electroless plating, Wang ZL, Yaegashi O, Sakaue H, Takahagi T, Shingubara S, J. Appl. Phys. 94 (7): 4697-4701 Oct 1 2003.
Thickness dependences of nucleation and annihilation fields of magnetic vortices in submicron supermalloy dots, Wu GR, Watanabe K, Shingubara S, Sakaue H, Takahagi T Jpn. J. Appl. Phys. 42 (8): 5038-5039 Aug 2003.
Low dielectric constant porous diamond films formed by diamond nanoparticles, Sakaue H, Yoshimura N, Shingubara S, Takahagi T, Appl. Phys. Lett. 83 (11): 2226-2228 Sep 15 2003.
Depth profile analysis of polyimide film treated by potassium hydroxide, Okumura H, Takahagi T, Nagai N, Shingubara S, Journal of Polymer Science Part B-Polymer Physics 41 (17): 2071-2078 Sep 1 2003.
Formation of aluminum nanodot array by combination of nanoindentation and anodic oxidation of aluminum, Shingubara S, Murakami Y, Morimoto K, Takahagi T, Surface Science 532: 317-323 Jun 10 2003.
Influence of surface oxide of sputtered TaN on displacement plating of Cu, Wang ZL, Sakaue H, Shingubara S, Takahagi T, Jpn. J. Appl. Phys. 42 (4b): 1843-1846 Apr 2003.
Analysis of chemical structures of ultrathin oxynitride films by X-ray photoelectron spectroscopy and secondary ion mass spectrometry, Miya H, Izumi M, Konagata S, Takahagi T, Jpn. J. Appl. 42 (3): 1119-1122 Mar 2003.
Computer-aided chemistry estimation method of electronic-polarization dielectric constants for the molecular design of low-k materials, Takahagi T, Saiki A, Sakaue H, Shingubara S, Jpn. J. Appl. Phys. 42 (1): 157-161 Jan 2003.
Electroless plating of copper on metal-nitride diffusion barriers initiated by displacement plating, Wang Z, Ida T, Sakaue H, Shingubara S, Takahagi T, Electrochemical And Solid State Letters 6 (3): C38-C41 Mar 2003.
Fabrication of nanomaterials using porous alumina templates, Shingubara S, Journal of Nanoparticle Research 5 (1-2): 17-30 Apr 2003.
Preparation of Atomic-Scale Level Smooth Si(100) Surface using Wet Treatment, Sakaue H., Taniguchi Y., Okamura Y., Shingubara S. and Takahagi T., Abstracts of 7th Int. Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7, Nara) 228, Nov. 2003.
Wet Treatment for Preparing Atomically Smooth Si(100) Wafer Surface , Sakaue H., Taniguchi Y., Okamura Y., Shingubara S. and Takahagi T., Abstracts of 9th Int. Conf. on Formation of Semiconductor Interfaces (ICFSI-9, Madrid) 46, Sep. 2003.
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【2002年】
Aluminum nanodot array formed by anodic oxidation and its conduction properties, Shingubara S, Murakami Y, Sakaue H, Takahagi T, Proc. of SPIE , vol.4999, Quantum Sensing: Evolution and Revolution from Past to Future, edited by M.Razeghi, and G.J.Brown, SPIE.
Formation of Al dot hexagonal array on Si using anodic oxidation and selective etching, Shingubara S, Murakami Y, Sakaue H, Takahagi T, Jpn. J. Appl. Phys. 41(3b): L340-L343 Mar 15 2002.
Optical Spectroscopic Studies of the Dispersibility of Gold Nanoparticle Solutions, Huang S, Minami K., Sakaue H., Shingubara S, Takahagi T, J. Appl. Phys. 92 (12): 7486-7490 Dec 15 2002.
Improved Mechanical Strength of Porous Diamond Film by Silane Coupler, Sakaue H., Yoshimura N., Shingubara S, Takahagi T, Mater. Res. Soc. Proc. pp.313-318, 2002.
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【2001年】
Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir-Blodgett method, Huang S, Tsutsui G, Sakaue H, Shingubara S, Takahagi T, Journal of Vacuum Science & Technology B 19 (6): 2045-2049 Nov-Dec 2001.
Absorbed Water on a Silicon Wafer Surface Exposed to Atmosphere, Takahagi T, Sakaue H, Shingubara S, Jpn. J. Appl. Phys. Vol.40, No.11, p.6198-6291, 2001.
Study of a Dielectric Constant Due to Electronic Polarization Using a Semiempirical Molecular Orbital Method I, Yamada K, Saeki A, Sakaue H, Shingubara S, Takahagi T, Jpn. J. Appl. Phys. Vol.40, No.8, p.4829-4836, 2001.
Wet preparation of defect-free hydrogen-terminated silicon wafer surface and its characterization in atomic-scale, Takahagi T, Shingubara S, Sakaue H, Ultra Clean Processing Of Silicon Surfaces 2000 Solid State Phenomena 76-77: 105-110 2001.
Scanning Electron Microscope Observation of Heterogeneous Three-Dimensional Nanoparticle Array Using DNA., Takahagi T, Tsutsui G, Huang S, Sakaue H, Shingubara S, Jpn. J. Appl. Phys. Vol.40, No.5B p.L521-L523, 2001.
Well-Size-Controlled Colloidal Gold Nanoparticles Dispersed in Organic Solvents., Tsutsui G, Huang S, Sakaue H, Shingubara S, Takahagi T, Jpn. J. Appl. Phys. Vol.40, No.1 p.346-349, 2001.
Formation of a Large-Scale Langmuir-Blodgett Monolayer of Alkanethiol-Encapsulated Gold Particles., Huang S, Tsutsui G, Sakaue H, Shingubara S, Takahagi T, J. Vac. Sci. Technol. B, Vol.19, No.1 p.115-120, 2001.
Atomic-Scale Defect Control on Hydrogen-Terminated Silicon Surface at Wafer Scale., Sakaue H, Fujiwara S, Shingubara S, Takahagi T, Appl. Phys. Lett., Vol.78, No.3 p.309-311, 2001.
Fabrication of Nanohole Array on Si Using Self-Organized Porous Alumuna Mask, Shingubara S, Okino O, Murakami Y, Sakaue H, Takahagi T, J. Vac. Sci. Technol. B, Vol.19, No.5 p.1901-1904, 2001.
Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Sakaue H, Yoshimura N, Shingubara S, Takahagi T, Mater. Res. Soc. Proc., pp.647-652, 2001.
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【2000年】
Electrical Properties of Self-Organized Nanostructures of Alkanethiol-Encapsulated Gold Particles., Huang S, Tsutsui G, Sakaue H, Shingubara S, Takahagi T J. Vac. Sci. Technol. B Vol.18, No.6 p.2653-2657 2000.
Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Sakaue H, Yoshimura N, Shingubara S, Takahagi T, Abstracts of Advanced Metallization Conf. (AMC2000, San Diego) pp.175-176 Sep. 2000.
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【1999年】
Multiprobe resistance change monitoring of blech pattern during electromigration testing, Shingubara A, Osaka T, Sakaue H, Takahagi T, Verbruggen A H, The 5th International Workshop on Stress-Induced Phenomena in Metallization (1999) 138-149.
Electromigration Reliability Study of a GMR Spin Valve Devices, Shingubara S, Takeda Y, Sakaue H, Takahagi T, MRS Symp. Proc., 563(1999)145-150.
Fabrication of nano holes array on Si substrate using anodically oxidized aluminum etching mask Digest of Papers of Inter.， Shingubara S, Okino O, Nakaso K, Sakaue H, Takahagi T, Microprocesses and Nanotechnology Conf., (1999)124-125.
Wet preparation of atomic-scale defect-free hydrogen-terminated Si wafer surface., Takahagi T, Shingubara S, Sakaue H, Abstract of 196th Meeting of The Electrochemical Society, (1999)1067.
Room temperature coulomb-blockade observation of alkanethiol-encapsulated gold particles using AFM., Huang S, Tsutsui G, Sakaue H, Shingubara S, Takahagi T, Digest of papers of Inter. Microprocesses and Nanotechnology Conf., (1999)46-47.
Perfect control of hydrogen-terminated silicon wafer surface, Sakaue H, Fujiwara S, Nakanishi H, Shingubara S, Takahagi T, Proc. of 9th Inter. Conf. on Production Engineering, (1999)871-876.
Self Organized Gold Nanodots Array On A Silicon Substrate And Its Mechanica Stability, Tsutsui G, Huang S, Sakaue H, Shingubara S, Takahagi T, Jpn J Appl Phys Vol.38, No.12a Page.L1488-L1490 1999.
Correlation between agglomeration of a thin film and reflow filling in a contact hole for sputtered Al films., Shingubara S, Kotani H, Sakaue H, Nishiyama F, Takahagi T, J Vac Sci Technol B Vol.17, No.6 Page.2553-2558 1999.
Control of Interdot Space And Dot Size In A Two-Dimensional Gold Nanodot Array., Huang S, Tsutsui G, Sakaue H, Shingubara S, Takahagi T, Jpn J Appl Phys Vol.38, No.4b Page.L473-L476 1999.
Two-dimensional nanoware array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum., Shingubara S, Okino O, Sayama Y, Sakaue H, Takahagi T, Solid-State Electron Vol.43, No.6 Page.1143-1146 1999.
Molecular dynamics simulation of a void in an aluminum interconnection contain triple points grain boundary., Abdeslam S, Shingubara S , Advanced Metallization Conference, (1999) 475-482.
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【1998年】
Self-Organization of A Two-Dimensional Array of Gold Nanodots Encapsulated By Alkanethiol., Huang S, Sakaue H, Shingubara S, Takahagi T, Jpn J Appl Phys Vol.37, No.12b Page.7198-7201 1998.
Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates., Narayanan V, Mahajan S, Sukidi N, Dietz N, Bachmann K J, Hu C, Shingubara S , Mater Sci Eng B Vol.B54, No.3 Page.207-209 1998.
Directional copper deposition using dc magnetron self-sputtering., Radzimski Z J, Posadowski W M, Rossnagel S M, Shingubara S, J Vac Sci Technol B Vol.16, No.3 Page.1102-1106 1998.
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【1997年】
Ordered Two-Dimensional Nanowire Array Formation Using Self-Organized Nanoholes of Anodically Oxidized Aluminum., Shingubara S, Okino O, Sayama Y, Sakaue H, Takahagi T, Jpn J Appl Phys Vol.36, No.12b Page.7791-7795 1997.
Effect of interface reaction and wetting properties on Al reflow characteristics., Shingubara S, Kotani H, Ando K, Sakaue H, Nishiyama F, Takahagi T, Adv Met Interconnect Syst UlSI Appl 1996 Page.117-121 1997.
A Model for Resolution Dependent Roughness Values Measured by an Optical Profiler for Specific Surfaces., Furukawa M, Shingubara S, Horiike Y, Jpn J Appl Phys Vol.36, No.6a Page.3750-3754 1997.
Highly Selective SiO2 Etching Using CF4/C2H4., Sakaue H, Kojima A, Osada N, Shingubara S, Takahagi T, Jpn J Appl Phys Vol.36, No.4b Page.2477-2481 1997.
Optical emission spectroscopy of high density metal plasma formed during magnetron sputtering., Radzimski Z J, Hankins O E, Cuomo J J, Posadowski W P, Shingubara S, J Vac Sci Technol B Vol.15, No.2 Page.202-208 1997.
Gap-filling of Cu Employing Sustained Self-Sputtering with Inductively Coupled Plasma Ionization., Ichiki T, Kikuchi T, Horiike Y, Sano A, Shingubara S, Jpn J Appl Phys Vol.36, No.3b Page.1469-1472 1997.
Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on a NH4F-Treated Si(111) Surface., Sakaue H, Takahashi E, Tanaka T, Shingubara S, Takahagi T, Jpn J Appl Phys Vol.36, No.3b Page.1420-1423 1997.
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【1996年】
Study on Adsorption Behavior of Organic Contaminations on Silicon Surface by Gas Chromatography/Mass Spectrometry., Takahagi T, Shingubara S, Sakaue H, Hoshino K,Yashima H, Jpn J Appl Phys Vol.35, No.7a Page.L818-L821 1996.
Formation of Self-Assembled Organic Ultrathin film by Chemisorption on Silicon Crystal Surface., Takahagi T, Nagasawa Y, Ishitani A, Jpn J Appl Phys Vol.35, No.6a Page.3542-3546 1996.
Resistance oscillations induced by DC electromigration., Shingubara S, Fujiki K, Sakaue H, Takahagi T, Aip Conf Proc (Am Inst Phys) No.373 Page.248-262 1996.
High-Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas., Kobayashi Y, Chinzei Y, Horiike Y, Asanome H ,Kurosaki R,Kikuchi J, Shingubara S, Jpn J Appl Phys Vol.35, No.2b Page.1474-1477 1996.
Fabrication of a Si Nanometer Column PN Junction and Implanted Defect Evaluation by Transmission Electron Microscopy., Sukesako H, Kawasaki T, Sakaue H, Shingubara S, Takahagi T, Horiike Y, Jpn J Appl Phys Vol.35, No.2b Page.1045-1048 1996.
Aluminum-Selective Chemical Vapor Deposition Induced by Hydrogen Desorption on Silicon., Sakaue H, Katsuda Y, Konagata S, Shingubara S, Takahagi T , Jpn J Appl Phys Vol.35, No.2b Page.1010-1013 1996.
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【1995年】
Interaction of a void and a grain boundary under a high electric current stress employing three-dimensional molecular dynamics simulation., Shingubara S, Utsunomiya I, Takahagi T, Appl Surf Sci Vol.91, No.1/4 Page.220-226 1995.
Measurement of Fluorocarbon Radicals Generated from C4F8/H2 Inductively Coupled Plasma: Study on SiO2 Selective Etching Kinetics., Kubota K, Shingubara S, Matsumoto H, Horiike Y,Shindo H, Jpn J Appl Phys Vol.34, No.4b Page.2119-2124 1995.
Epitaxial growth of α-copper phthalocyanine crystal on Si(001) substrate by organic molecular beam deposition., Nonaka T, Nakagawa Y, Mori Y, Hirai M, Matsunobe T, Nakamura M, Takahagi T, Lin H, Koumoto K, Thin Solid Films Vol.256, No.1/2 Page.262-267 1995.
Fabrication and Evaluation of Three‐Dimensional Optically Coupled Common Memory., Miyake K, Namba T, Hashimoto K, Sakaue H, Miyazaki S, Horiike Y, Yokoyama S, Koyanagi M, Hirose M, Jpn J Appl Phys Vol.34, No.2b Page.1246-1248 1995.
Resistance Oscillations Induced By Direct Durrent Electromigration., Shingubara S, Fujiki K, Sano A, Inoue K, Sakaue H, Saitoh M, Horiike Y, Jpn J Appl Phys Vol.34, No.2b Page.1030‐1036 1995.
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【1994年】
Electromigration characteristics of Cu and Al interconnections., Shingubara S, Fujiki K, Sano A, Sakaue H, Horiike Y, Mater Reliab Microelectron 4 Page.441-451 1994.
Measurement of Fluorocarbon Radicals generated from C4F8/H2 Inductively Coupled Plasma: Study on SiO2 Selective Etching Kinetics., Matsumoto H, Horiike Y, Kubota K, Shingubara S, Shindo H, Proc Symp Dry Process Vol.16th Page.205-210 1994.
Chemical structure and reactivity of a silicon single crystal surface fluorinated by xenon fluoride., Takahagi T, Ishitani A, Wakao S, J Appl Phys Vol.76, No.5 Page.3140-3143 1994 .
Electromigration Characteristics of Cu-Al Precipitate in AlCu Interconnection., Shingubara S, Nishida H, Sakaue H, Horiike Y, Jpn J Appl Phys Part 1 Vol.33, No.7a Page.3860-3863 1994.
Atomic Force Microscopy of Solution Grown Polyethylene Single Crystals., Nakagawa Y, Hayashi H, Takahagi T, Soeda F, Ishitani A, Toda A, Miyaji H, Jpn J Appl Phys Part 1 Vol.33, No.6b Page.3771-3774 1994.
Organic Superlattice Film by Alternate Deposition of Single Molecular Layers., Nonaka T, Mori Y, Nagai N, Nakagawa Y, Saeda M, Takahagi T, Ishitani A, Thin Solid Filmsvol.239, No.2 Page.214-219 1994.
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【1993年】
Vertical and lateral hole aluminum filling characteristics employing electron cyclotron resonance plasma sputtering with high magnetic field., Shingubara S, Morimoto N, Takehiro S, Matsui Y, Utsunomiya I, Horiike Y, Shindo H, Appl Phys Lett Vol.63, No.6 Page.737-739 1993.
Fluorine Termination of Silicon Surface by F2 and Succeeding Reaction with Water., Nakamura M, Takahagi T, Ishitani A, Jpn J Appl Phys Vol.32, No.6b Page.3125-3130 1993.
Digital etching study and fabrication of fine Si lines and dots., Yamamoto J, Kawasaki T, Sakaue H, Shingubara S, Horiike Y, Thin Solid Films Vol.225, No.1/2 Page.124-129 1993.
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【1992年】
Al etching characteristics employing helicon wave plasma., Jiwari N, Iwasawa H, Narai A, Sakaue H, Horiike Y, Shindo H, Shoji T, Proc Symp Dry Process Vol.14th Page.23-26 1992.
The Fluorine Termination of Silicon Surface by F2 Treatment and Variation of the Surface Structure in Water., Nakamura M, Takahagi T, Ishitani A, Proc Symp Dry Process Vol.14th Page.111-116 1992.
In-Situ X-Ray Photoelectron Spectroscopy of Reactive-Ion-Etched Surfaces of Indium-Tin Oxide Film Employing Alcohol Gas., Sakaue H, Koto M, Horiike Y, Jpn J Appl Phys Vol.31,No.6b Page.2006-2010 1992.
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【1991年】
Diagnostics of Hydrogen Role in the Si Surface Reaction Processes Employing In‐situ Fourier Transform Infrared-Attenuated Total Reflection., Kawamura K, Ishizuka S, Sakaue H, Horiike Y, Jpn J Appl Phys Part 1 Vol.30, No.11B Page.3215-3218 1991.
Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field., Takehiro S, Yamanaka N, Shindo H, Shingubara S, Horiike Y, Jpn J Appl Phys Vol.30, No.12b Page.3657-3661 1991.
In-situ X-ray Photoelectron Spectroscopy Observation on Reactive Etched Surface of Indium-Tin Oxide Film Employing Alcohol Gas., Sakaue H, Koto M, Hashimoto T, Horiike Y, Proc Symp Dry Process Vol.13th Page.33-37 1991.
Electromigration-induced abrupt changes in electrical resistance associated with void dynamics in aluminum interconnections., Shingubara S, Kaneko H, Saitoh M, J Appl Phys Vol.69, No.1 Page.207-212 1991.
Digital chemical vapor deposition of SiO2 using a repetitive reaction of triethylsilane/hydrogen and oxidation., Sakaue H, Nakano M, Ichihara T, Horiike Y, Jpn J Appl Phys Vol.30, No.1B Page.L124-L127 1991.
質量標準器の洗浄面の定性分析, 池田進, 内川恵三郎, 長沢佳克, 高萩隆行, 表面科学Vol.12, No.5 Page.298-302 1991.
Fluorine-containing species on the hydrofluoric acid etched silicon single-crystal surface., Takahagi T, Ishitani A, Kuroda H, Nagasawa Y, J Appl Phys Vol.69, No.2 Page.803-807 1991.
Electromigration in a single crystalline submicron width aluminium interconnection., Shingubara S, Nakasaki Y, Kaneko H, Appl Phys Lett Vol.58, No.1 Page.42-44 1991.
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【1990年】
Study on reaction mechanism of aluminum selective chemical vapor deposition with in-situ XPS measurement., Kawamoto H, Sakaue H, Takehiro S, Horiik E Y, Jpn J Appl Phys Vol.29, No.11 Page.2657-2661 1990.
Atomic layer controlled digital etching of silicon., Sakaue H, Iseda S, Asami K, Yamamoto J, Hirose M, Horiike Y, Jpn J Appl Phys Vol.29, No.11 Page.2648-2652 1990.
Filling of Si oxide into a deep trench using digital CVD method., Horiike Y, Ichihara T, Sakaue H, Appl Surf Sci Vol.46, No.1/4 Page.168-174 1990.
Effects of surface cleaning and X-ray irradiation in XPS study of polymers., Takahagi T, Nakayama Y, Soeda F, Ishitan I A, J Appl Polym Sci Vol.41, No.7/8 Page.1451-1458 1990.
Conformal chemical vapor deposition of insulator films employing digital method., Ichihara T, Sakaue H, Okada T, Horiike Y, Proc Symp Dry Process Vol.12th Page.35-40 1990.
Control of the chemical reactivity of a silicon single-crystal surface using the chemical modification technique., Takahagi T, Ishitani A, Kuroda H, Nagasawa Y, Ito H, Wakao S, J Appl Phys Vol.68, No.5 Page.2187-2191 1990.
Digital chemical vapor deposition of SiO2., Nakano M, Sakaue H, Kawamoto H, Nagata A, Hirose M, Horiike Y, Appl Phys Lett Vol.57, No.11 Page.1096-1098 1990.
Digital chemical vapor deposition and etching technologies for semiconductor processing., Horiike Y, Tanaka T, Nakano M, Iseda S, Sakaue H, Nagata A, Shindo H, Miyazaki S, Hirose M, J Vac Sci Technol A Vol.8, No.3 Pt.1 Page.1844-1850 1990.
A study of XPS O1s spectrum of poly(ethylene terephthalate)., Nakayama Y, Takahagi T, Soeda F, J Polym Sci Part A Vol.28, No.7 Page.1813-1821 1990.
Suppressing stress‐induced and electromigration failures with Al/Al stacked structure., Shima S, Ito H, Shingubara S, Dig Tech Pap Symp VLSI Technol Vol.1990 Page.27-28 1990.
Scanning tunneling microscopy of silicon surfaces in air: Observation of atomic images., Nakagawa Y, Ishitani A, Takahagi T, Kuroda H, Tokumoto H, Ono M, Kajimura K, J Vac Sci Technol A Vol.8, No.1 Page.262-265 1990.
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【1998年以前】
Electromigration induced abrupt change of electrical resistance in aluminum interconnection., Shingubara S, Kaneko H, Saitoh M, Ext Abstr 21st Conf Solid State Devices Mater 1989 Page.33-36 1989.
XPS study of oriented organic molecules. III. Langmuir-Blodgett membrane of a fatty acid., Nakayama Y, Takahagi T, Soeda F, Ishitani A, J Colloid Interface Sci Vol.131, No.1 Page.153-160 1989.
XPS study of oriented organic molecules. The single crystal of an azobenzene-containing alkyl ammonium amphiphile., Nakayama Y, Soeda F, Ishitani A, Takahagi T, Shimomura M, Okuyama K, Kunitake T, Appl Surf Sci Vol.33/34 Page.1307-1316 1988.
Molecular and crystal structure of poly(vinylidene chloride)., Takahagi T, Chatani Y, Kusumoto T, Tadokoro H, Polym J Vol.20, No.10 Page.883-893 1988.
Epitaxial growth of silicon at low temperature by ultrahigh vacuum electron cyclotron resonance plasma chemical vapor deposition., Nagai I, Takahagi T, Ishitani A, Kuroda H, Yoshikawa M, J Appl Phys Vol.64, No.10 Pt.1 Page.5183-5188 1988.
Laser-induced pattern projection etching of aluminum., Sakaue H, Miyazaki S, Hirose M, Proc Symp Dry Process Vol.10th Page.187-190 1988.
The formation of hydrogen passivated silicon single‐crystal surfaces using ultraviolet cleaning and HF etching. Takahagi T, Nagai I, Ishitani A, Kuroda H, Nagasawa Y, J Appl Phys Vol.64, No.7 Page.3516-3521 1988.
XPS study of oriented organic molecules. Vesicles of azobenzene-containing alkyl ammonium amphiphiles., Nakayama Y, Takahagi T, Soeda F, Ishitani A, Shimomura M, Kunitake T, J Colloid Interface Sci Vol.122, No.2 Page.464-474 1988.
XPS analysis of NH3 plasma-treated polystyrene films utilizing gas phase chemical modification., Nakayama Y, Takahagi T, Soeda F, Ishitani A, Hatada K, Nagaoka S, Suzuki J, J Polym Sci Part A Vol.26, No.2 Page.559-572 1988.
XPS study on the surface structure of carbon fibers using chemical modification and C1s line shape analysis., Takahagi T, Ishitani A, Carbon VN Vol.26, No.3 Page.389-395 1988.
Vortices around a sinkhole: Phase diagram for one-celled and two-celled vortices., Shingubara S, Hagiwara K, Fukushima R, Kawakubo T, J Phys Soc Jpn Vol.57, No.1 Page.88-94 1988.
Effect of stress on electromigration MTF in Al based interconnections., Shingubara S, Iwabuchi S, Shima S, Ext Abstr 19th Conf Solid State Devices Mater 1987 Page.455-458 1987.
X-ray photoelectron spectroscopy study of an ion sputtering process of fluoro polymers using Monte Carlo simulation., Takahagi T, Ishitani A, Macromolecules Vol.20, No.2 Page.404-407 1987.
XPS studies on the chemical structure of the stabilized polyacrylonitrile fiber in the carbon fiber production process., Takahagi T, Shimada I, Ishitani A, Fukuhara M, Morita K, J Polym Sci Part A Vol.24,No.11 Page.3101-3107 1986.
FT-IR study of the stabilization reaction of polyacrylonitrile in the production of carbon fibers., Shimada I, Takahagi T, Ishitani A, Fukuhara M, Morita K, J Polym Sci Part A Vol.24, No.8 Page.1989-1995 1986.
Monte Carlo simulation of an ion sputtering process of polymer materials., Takahagi T, Okuno K, Tomita S, Ishitani A, Second Ion Mass Spectrom Page.386-388 1984.
Formation of vortices around a sinkhole., Shingubara S, Kawakubo T, J Phys Soc Jpn. Vol.53, No.3 Page.1026-1030 1984.
XPS studies by use of the digital difference spectrum technique of functional groups on the surface of carbon fiber., Takahagi T, Ishitani A, Carbon Vol.22,No.1 Page.43-46 1984.
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